Dopant-vacancy binding effects in Li-doped magnesium hydride

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Calculated properties of nitrogen-vacancy complexes in beryllium- and magnesium-doped GaN

Rights: © 2003 American Physical Society (APS). This is the accepted version of the following article: Latham, C. D. & Jones, R. & Öberg, S. & Nieminen, Risto M. & Briddon, P. R. 2003. Calculated properties of nitrogen-vacancy complexes in berylliumand magnesium-doped GaN. Physical Review B. Volume 68, Issue 20. 205209-1-5. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.68.205209, which has...

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2010

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.82.134109